Single Crystal Silicon-Silicon Dioxide Wafer N-type ( 4 inch)

Single Crystal Silicon-Silicon dioxide Wafer N-type ( 4 inch)

Single Crystal Silicon / Silicon Oxide, Wafer Diameter : 4 inch, N-type

Dia: 100 mm (4 inches)
Type: N
Orientation:<100>
Wafer thickness: 500 micro meter
Resistivity: <0.01
Polishing: Front Side Polished
Etching: Back Side Etched
SiO2 Oxide Thickness: 300 nm (dry)

5,100.00

Description

Note:

For pricing & ordering information, please contact us at sales.anbsolutions@gmail.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: sales.anbsolutions@gmail.com

Customization:

If you are planning to order large quantities for your industrial and academic needs,

please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.

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